DocumentCode
1112295
Title
Scaling issues related to high field phenomena in submicrometer MOSFET´s
Author
Sangiorgi, Enrico ; Hofstatter, E.A. ; Smith, R.K. ; Bechtold, P.F. ; Fichtner, Wolfgang
Author_Institution
University of Bologna, Bologna, Italy
Volume
7
Issue
2
fYear
1986
fDate
2/1/1986 12:00:00 AM
Firstpage
115
Lastpage
118
Abstract
Both enhancement and depletion n-channel MOS devices with electrical channel lengths between 1 and 0.3 µm are characterized in terms of carrier heating effects. The effect of gate oxide thickness on the two-dimensional (2-D) electric field distribution has been analyzed through 2-D numerical device simulation, and its impact on carrier heating process has been experimentally quantified. Our results allow some conclusions for reduced supply voltages (2 and 3 V for temperatures of 77 and 300 K, respectively) for future NMOS technologies with design rules of 0.75 µm.
Keywords
Analytical models; Current measurement; MOS devices; MOSFET circuits; Resistance heating; Senior members; Temperature; Thickness measurement; Two dimensional displays; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26312
Filename
1486135
Link To Document