DocumentCode :
1113290
Title :
Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance
Author :
Fischer, R. ; Morkoç, Hadis
Author_Institution :
University of Illinois at Urbana-Champaign, Urbana, IL
Volume :
7
Issue :
6
fYear :
1986
fDate :
6/1/1986 12:00:00 AM
Firstpage :
359
Lastpage :
362
Abstract :
Improved high-frequency performance in GaAs/AlGaAs heterojunction bipolar transistors (HBT\´s) by reduction of extrinsic base resistance is demonstrated. A new self-aligned process which is very simple, yet capable of producing 0.25-µm emitter-to-base contact gaps, is described. By the use of AuBe, we have also been able to produce contact resistances to p-type GaAs (p = 5 × 1018) as low as 1.2 × 10-7Ω.cm2. This is the lowest value reported to p-type GaAs considering the relatively low doping levels used. By employing these techniques, we have produced HBT\´s with 2.5-µm-wide emitters having current gain cutoff frequencies fTthat appear to be greater than 35 GHz and maximum oscillation frequencies f_{\\max } of 22 GHz.
Keywords :
Cutoff frequency; Delay; Doping; Epitaxial growth; Etching; Fabrication; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Ring oscillators;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26400
Filename :
1486223
Link To Document :
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