DocumentCode
1113455
Title
A two-dimensional analytical threshold voltage model for MOSFET´s with arbitrarily doped substrates
Author
Kendall, J.D. ; Boothroyd, A.R.
Author_Institution
Northern Telecom Electrons Ltd., Ottawa, Ont., Canada
Volume
7
Issue
7
fYear
1986
fDate
7/1/1986 12:00:00 AM
Firstpage
401
Lastpage
403
Abstract
A threshold voltage model is presented which is valid for short- and long-channel MOSFET´s with a nonuniform substrate doping profile. The model is based upon an approximate two-dimensional analytical solution of Poisson´s equation for a MOSFET of arbitrary substrate doping profile which takes into account the effect of curved junctions of finite depth. The analytical model is compared to MINIMOS simulations showing that it can accurately predict short-channel threshold voltage falloff and threshold voltages in this vicinity without the use of fitting parameters.
Keywords
Analytical models; Boundary conditions; Doping profiles; Laplace equations; MOSFET circuits; Niobium; Poisson equations; Predictive models; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26416
Filename
1486239
Link To Document