DocumentCode :
1113917
Title :
An introduction to the development of the semiconductor laser
Author :
Dupuis, Russell D.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Volume :
23
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
651
Lastpage :
657
Abstract :
In late 1962, the first semiconductor injection lasers were reported. While earlier workers had considered the possibility of light amplification in semiconductors, the achievement of high-efficiency electroluminescence from forward-biased GaAs p-n junctions was the event that catalyzed and accelerated efforts to demonstrate a semiconductor laser. This paper will attempt to review the experimental and theoretical work that preceded the actual demonstration of the semiconductor diode laser.
Keywords :
History; Semiconductor lasers; Conductors; Diode lasers; Electroluminescence; Gallium arsenide; Laser theory; Lasers and Electro-Optics Society; Notice of Violation; P-n junctions; Semiconductor lasers; Stimulated emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1987.1073450
Filename :
1073450
Link To Document :
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