Title :
A High Data-Rate Energy-Efficient Interference-Tolerant Fully Integrated CMOS Frequency Channelized UWB Transceiver for Impulse Radio
Author :
Medi, Ali ; Namgoong, Won
Author_Institution :
Sharif Univ. of Technol., Tehran
fDate :
4/1/2008 12:00:00 AM
Abstract :
A pulse-based ultra-wideband transceiver (UWB-IR) operating in the 3.25-4.75 GHz band designed for low power and high data rate communication is implemented in 0.18 mum CMOS technology. When operating at 1 Gbps data rate, it dissipates 98 mW (98 pJ/b) in the receive-mode and 108 mW (108 pJ/b) in the transmit-mode from a 1.8 V supply [1]. Compared to UWB transceivers reported in the literature, this chip dissipates the lowest energy per bit. In addition, the combination of the frequency channelized architecture, high-linearity RF circuits, aggressive baseband filtering, and low local oscillator spurs results in an interference-tolerant receiver that is able to co-exist with systems operating in the 2.4 GHz and 5 GHz ISM bands as well as interfering systems operating within the signal band. The receiver provides a maximum voltage gain of 82 dB. Within the band of interest and at a typical gain of 57 dB, overall noise figure of 4.5 to 5.4 dB, IIP3 of -5 to -10 dBm, and 47 dB channel-to-channel isolation are measured. The receiver can tolerate in-band and out-of-band narrowband interferers that are as large as -20 dBm and 0 dBm, respectively. The mostly digital programmable transmitter delivers maximum output swing of 800 mVpp to a 50-ohm antenna at rates as high as 1.5 Gbps.
Keywords :
CMOS integrated circuits; microwave integrated circuits; radiofrequency interference; transceivers; ultra wideband communication; CMOS technology; UWB transceiver; bit rate 1 Gbit/s; bit rate 1.5 Gbit/s; channel-to-channel isolation; digital programmable transmitter; frequency 2.4 GHz; frequency 3.25 GHz to 4.75 GHz; frequency 5 GHz; frequency channelized architecture; gain -5 dB to -10 dB; gain 57 dB; gain 82 dB; high data rate communication; high-linearity RF circuits; impulse radio; noise figure 4.5 dB to 5.4 dB; power 108 mW; power 98 mW; pulse-based ultra-wideband transceiver; resistance 50 ohm; size 0.18 mum; voltage 1.8 V; Baseband; CMOS technology; Circuits; Energy efficiency; Filtering; Gain; Radio frequency; Radiofrequency interference; Transceivers; Ultra wideband technology;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2008.917513