DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs

Author

Ketterson, A.A. ; Laskar, J. ; Brock, T.L. ; Adesida, I. ; Kolodzey, J. ; Aina, O.A. ; Hier, H.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

36

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

2361

Lastpage

2363

Abstract

Lattice-matched InGaAs/InAlAs MODFETs with gate lengths down to 0.15 μm have been fabricated and characterized. A large discrepancy is found between the g_m measured at DC and microwave frequencies and is attributed to the finite time constant of electron emission from deep traps in the InAlAs. A maximum f_T of 112 GHz is measured on a 0.15-μm gate-length device. Devices with more shallow recessed gates are found to have a 50% larger output conductance, which causes the devices to exhibit an f_T that is greater than f_max

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 112 GHz; DC characteristics; InGaAs-InAlAs; MODFETs; RF characterization; cutoff frequency; deep traps; electron emission; gate lengths; lattice matched transistors; microwave frequencies; output conductance; recessed gates; time constant; transconductance; Electron emission; Frequency measurement; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Microwave frequencies; Microwave measurements; Radio frequency; Time measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40922

Filename

40922