• DocumentCode
    1114435
  • Title

    A two-dimensional analytical model of the cross-bridge Kelvin resistor

  • Author

    Schreyer, Tim A. ; Saraswat, Krishna C.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    7
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    661
  • Lastpage
    663
  • Abstract
    This paper presents an analytical model which correctly explains the two-dimensional (2-D) current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is derived analytically and compared with two-dimensional numerical simulations. It becomes significant when specific contact resistivity \\rho_{c} < R_{s} \\times \\delta ^{2} , where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and Rsis the diffusion sheet resistance.
  • Keywords
    Analytical models; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Geometry; Kelvin; Numerical simulation; Resistors; Two dimensional displays;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26511
  • Filename
    1486334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114435