• DocumentCode
    1114561
  • Title

    Fabrication of inversion-type n-channel MOSFET´s using cubic-SiC on Si

  • Author

    Shibahara, K. ; Saito, T. ; Nishino, S. ; Matsunami, H. ; Matsunami, H.

  • Author_Institution
    Kyoto University, Sakyo, Kyoto, Japan
  • Volume
    7
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    692
  • Lastpage
    693
  • Abstract
    Inversion-type n-channel MOSFET´s of cubic-SiC were successfully fabricated. Cubic-SiC was grown on Si
  • Keywords
    Crystals; Fabrication; Ion implantation; Lattices; Oxidation; P-n junctions; Schottky barriers; Silicon carbide; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26522
  • Filename
    1486345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114561