Delay time studies and electron mobility measurement in a-Si:H TFT

Author

Bashir, Rashid ; Subramanian, Chitra K. ; Neudeck, Gerold W. ; Chung, Kyo Y.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2944

Lastpage

2948

Abstract

The time delay in the drain current response to a step in the effective drive voltage was studied as one of the key parameters in characterizing the dynamic response of an a-Si:H thin-film transistor (TFT). It was determined that the a-Si:H delay time shows a similar behavior to that observed in a Si-MOSFET, i.e. it is directly proportional to the square of the channel length and inversely proportional to the effective drive voltage. A unique value of the channel field-effect electron mobility was measured by using the delay time results in the transmission line model. In amorphous semiconductors, the conventional methods of measuring mobility are inconvenient and complicated, whereas in this method the channel mobility is obtained by measuring only the delay time and the threshold voltage. Both of these parameters are obtained through electrical measurements on TFTs and hence require no special device structures

Keywords

amorphous semiconductors; carrier mobility; delays; dynamic response; elemental semiconductors; hydrogen; semiconductor device testing; silicon; thin film transistors; Si:H thin film transistor; TFT; amorphous semiconductors; channel field-effect electron mobility; channel length; drain current response; dynamic response; effective drive voltage; threshold voltage; time delay; transmission line model; Capacitance; Delay effects; Electric variables measurement; Electron mobility; FETs; MOSFET circuits; Thin film transistors; Threshold voltage; Time measurement; Transmission line measurements;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40960

Filename

40960