Hydrogenated amorphous-silicon photosensor for optically addressed high-speed spatial light modulator

Author

Li, Wen ; Rice, Robert A. ; Moddel, Garret ; Pagano-Stauffer, Laura A. ; Handschy, Mark A.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2959

Lastpage

2964

Abstract

A high-speed, optically addressed spatial light modulator (OASLM) which incorporates a hydrogenated amorphous silicon (a-Si:H) photosensor and a ferroelectric liquid-crystal (FLC) modulator is discussed. The device operates with an applied square-wave voltage such that read and write operations occur under reverse bias, while the erase operation occurs under forward bias. The OASLM exhibits a response time of 155 μs and a spatial resolution of >33 1p/mm. The capacitance and resistance of both the a-Si:H and FLC have been measured and are shown to influence the response of the device strongly

Keywords

amorphous semiconductors; elemental semiconductors; equivalent circuits; ferroelectric liquid crystals; hydrogen; liquid crystal devices; optical modulation; photodetectors; photoelectric devices; silicon; 155 mus; OASLM; PECVD; Si:H photosensor; amorphous semiconductors; capacitance; erase operation; ferroelectric liquid crystal modulator; optically addressed spatial light modulator; read operation; resistance; response time; spatial resolution; square-wave voltage; write operations; Delay; Ferroelectric materials; Glass; High speed optical techniques; Liquid crystal displays; Liquid crystals; Optical devices; Optical films; Optical filters; Optical modulation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40963

Filename

40963