a-Si:H,&rlhar2;a-Si, Ge:H, F graded-bandgap structures

Author

Conde, Joao Pedro ; Shen, DaShen ; Chu, Virginia ; Wagner, Sigurd

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2834

Lastpage

2838

Abstract

The optoelectronic properties of graded-bandgap a-Si:H, F&rlhar2;a-Si, Ge:H, F semiconductor structures were studied by the time-of-flight technique and by the voltage-bias dependence of the photocurrent. The mobility-lifetime (μτ) products for both electrons and holes depend strongly on the compositional grading. Values of μτ that are higher than in bulk alloys with the same effective optical bandgap can be obtained. With graded-gap amorphous structures, the electron and hole transport properties can be tuned independently

Keywords

Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; fluorine; hydrogen; interface structure; photoconductivity; plasma CVD coatings; semiconductor junctions; silicon; Si:H,F-SiGe:H,F; compositional grading; effective optical bandgap; electron transport; graded bandgap semiconductor structure; graded-gap amorphous structures; hole transport properties; mobility lifetime product; optoelectronic properties; photocurrent; plasma enhanced CVD technique; time-of-flight technique; voltage-bias dependence; Amorphous materials; Charge carrier processes; Crystallization; Electron mobility; Laser tuning; Nonhomogeneous media; Photonic band gap; Photovoltaic cells; Radiative recombination; Radio frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40968

Filename

40968