High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film

Author

Sera, Kenji ; Okumura, Fujio ; Uchida, Hiroyuki ; Itoh, Shinji ; Kaneko, Setsuo ; Hotta, Kazuaki

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2868

Lastpage

2872

Abstract

High-performance staggered a-Si:H and poly-Si thin-film transistors (TFTs) fabricated by XeCl excimer laser annealing of a-Si:H films are discussed. The field-effect mobility of poly-Si TFT is 102 cm ²/V-s, and that of a-Si:H TFT is 0.23 cm²/V-s. Their drain current on/off ratios are over 10⁶. Except for the crystallization, the fabrication process was the same for both of them. This process appears extremely promising for the integration of matrix elements and peripheral drivers in a single substrate

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; laser beam annealing; silicon; thin film transistors; Si:H thin film transistor; XeCl excimer laser annealing; amorphous semiconductors; drain current on/off ratios; fabrication process; field-effect mobility; peripheral drivers; polysilicon TFTs; staggered TFT; Annealing; Crystallization; Driver circuits; Leakage current; Optical device fabrication; Optical pulses; Pulsed laser deposition; Pump lasers; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40970

Filename

40970