Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique

Mo-and Ti-silicided junctions were formed using the ITM technique, which consists of ion implantation through metal (ITM) to induce metal-Si interface mixing and subsequent thermal annealing. Double ion implantation, using nondopant ions (Si or Ar) implantation for the metal-Si interface mixing and dopant ion (As or B) implantation for doping, has resulted in ultrashallow ( ≤ 0.1-µm) p⁺-n or n⁺-p junctions with ∼30-Ω sheet resistance for Mo-silicided junctions and ∼5.5-Ω sheet resistance for Ti-silicided junctions. The leakage current levels for the Mo-silicided n⁺-p junctions (0.1-µm junction depth) and the Mo-silicided p⁺-n junction (0.16-µm junction depth) are comparable to that for unsilicided n⁺-p junction with greater junction depth ( ∼0.25 µm).