Improved performance of 264 nm emission AIGaN-based deep ultraviolet light-emitting diodes

AlGaN-based multiple-quantum-well light-emitting diodes (LEDs) with peak emission at UV-C region of 264 nm were successfully gown on AlN template using metal organic chemical vapour deposition. It was found that a subband emission around 320 nm can be drastically reduced by inserting a thin 1 nm-thick AlN interlayer between the active region and p-type layers. This is presumably a result of the suppression of electron overflow or Mg diffusion. It was also observed that the output power in LEDs was increased up to more than 20 times by changing the layer construction.