DocumentCode :
1116024
Title :
Analytical treatment of MOSFET source—Drain resistance
Author :
Pimbley, Joseph M. ; Cumberbatch, Ellis ; Hagan, Patrick S.
Author_Institution :
Rensselaer Polytechnic Institute, Troy, NY
Volume :
34
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
834
Lastpage :
838
Abstract :
Series resistance in the metal-oxide-semiconductor field-effect transistor becomes increasingly important as design rules shrink. Material properties associated with the interconnect metal, the semiconductor, and the interface separating the two regions thus assume greater importance. An analytical formulation of the resistance in terms of these material properties is thus quite desirable. We formulate and solve a two-dimensional model of current flow by the method of matched asymptotic expansions. The major utility of this solution is provided by higher order corrections to the standard transmission line model of current flow in the ohmic contact region. We find that present methods for the extraction of material properties from experimental measurements with a transmission line model analysis would be enhanced by the inclusion of higher order terms we present here.
Keywords :
Conducting materials; Conductivity; Contact resistance; Electric resistance; Electrical resistance measurement; Fluid flow measurement; Integrated circuit interconnections; MOSFET circuits; Material properties; Ohmic contacts;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23003
Filename :
1486714
Link To Document :
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