Title :
Impact ionization in InAlAs/InGaAs HFET´s
Author :
Moolji, A.A. ; Bahl, S.R. ; Alamo, J. A del
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The presence of an energy barrier to the transfer of holes from the channel to the gate electrode of InAlAs/InGaAs HFET´s prevents the gate current from being a reliable indicator of impact ionization. Consequently, we have used a specially designed sidegate structure to demonstrate that due to the narrow bandgap of InGaAs, impact ionization takes place in the channel of these devices under normal operating conditions. The ionization coefficient was found to follow a classic exponential dependence on the inverse electric field at the drain end of the gate, for over three orders of magnitude.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; impact ionisation; indium compounds; HFET; InAlAs-InGaAs; energy barrier; gate current; heterostructure FET; impact ionization; inverse electric field; ionization coefficient; normal operating conditions; sidegate structure; Energy barrier; Gallium arsenide; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MESFETs; MODFETs; Photonic band gap;
Journal_Title :
Electron Device Letters, IEEE
