DocumentCode :
1116789
Title :
Analysis of the threshold voltage and its temperature dependence in electrolyte-insulator-semiconductor field-effect transistors (EISFET´s)
Author :
Barabash, Peter R. ; Cobbold, Richard S C ; Wlodarski, Wojciech B.
Author_Institution :
University of Toronto, Toronto, Canada
Volume :
34
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
1271
Lastpage :
1282
Abstract :
A first-order theoretical model is developed that allows the temperature dependence of the threshold voltage of an electrolyte-insulator-semiconductor field-effect transistor (EISFET) to be determined. Specifically, a detailed analysis is presented for a representative cell consisting of a Ag/AgCI reference electrode, a simple 1:1 electrolyte, and an ISFET. In addition, an insulator is assumed for which the site-binding model is applicable. All temperature-dependent parameters are identified and quantitatively described. Results are computed for SiO2and Al2O3insulators over a pH range from 1 to 12, and a temperature range from 20 to 80°C. Graphs of the surface-site occupancies versus the pH are shown to provide useful physical insight in interpreting the results. The threshold-voltage temperature coefficient is shown to be highly dependent on the pH; however, for Al2O3, over a 20-80°C range, the variation is roughly linear.
Keywords :
Biomedical engineering; Chemicals; Electrodes; Electrons; FETs; Insulation; Silicon; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23081
Filename :
1486792
Link To Document :
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