DocumentCode :
1117608
Title :
A simplified model to predict the linear temperature coefficient of a CMOS inverter´s delay time
Author :
Chang, Leon ; Vo, Khoa ; Berg, John
Author_Institution :
Standard Microsystems Corporation, Hauppauge, NY
Volume :
34
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
1834
Lastpage :
1837
Abstract :
The Curve-fitting equation A/(1 + BT) is used in this study of the temperature dependence of a MOSFET´s drain current. This leads to a simplified delay-time model in predicting the temperature coefficient of delay-time for a CMOS circuit. Good agreement is obtained between the measured CMOS ring-oscillator delay time and the simplified model. Both the experimental and computer-simulated data suggest that the half-supply point can be used to estimate the temperature coefficient of CMOS delay time.
Keywords :
Circuits; Degradation; Delay effects; Equations; Intrusion detection; Predictive models; Semiconductor device modeling; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23160
Filename :
1486871
Link To Document :
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