DocumentCode :
111794
Title :
A 1.2-V 4.2- \\hbox {p\\pm}/^{\\circ}\\hbox {C} High-Order Curvature-Compensated CMOS Bandgap Reference
Author :
Quanzhen Duan ; Jeongjin Roh
Author_Institution :
Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
Volume :
62
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
662
Lastpage :
670
Abstract :
This study presents a high-precision CMOS bandgap reference (BGR) circuit with low supply voltage. The proposed BGR circuit consists of two BGR cores and a curvature correction circuit, which includes a current mirror and a summing circuit. Two BGR cores adopt conventional structures with the curvature-down characteristics. A current-mirror circuit is proposed to implement one of the BGR cores to have the curvature-up characteristic. Selection of the appropriate resistances in the BGR cores results in one reference voltage with a well balanced curvature-down characteristic and another reference voltage with an evenly balanced curvature-up characteristic. The summation of these reference voltages is proposed to achieve a high-order curvature compensation. This curvature correction circuit causes the proposed BGR circuit without any trimming to show a measured temperature coefficient (TC) as low as 4.2 ppm/°C over a wide temperature range of 160 °C (-40 ~ 120 °C) at a power supply voltage of 1.2 V. The average TC for 8 random samples is approximately 9.3 ppm/°C. The measured power-supply rejection ratio (PSRR) of -30 dB is achieved at the frequency of 100 kHz. The total chip size is 0.063 mm2 with a standard 0.13-μm CMOS process.
Keywords :
CMOS integrated circuits; current mirrors; reference circuits; summing circuits; CMOS bandgap reference circuit; current mirror; curvature correction circuit; evenly balanced curvature-up characteristic; high-order curvature compensated reference circuit; low supply voltage; reference voltage; size 0.13 mum; summing circuit; temperature -40 C to 120 C; voltage 1.2 V; well balanced curvature-down characteristic; Accuracy; CMOS integrated circuits; MOSFET; Photonic band gap; Resistors; Temperature dependence; Bandgap reference; high-order curvature compensation; high-precision; low voltage; temperature coefficient;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2014.2374832
Filename :
6999965
Link To Document :
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