DocumentCode :
1118300
Title :
Oxidation rate reduction in the submicrometer LOCOS process
Author :
Mizuno, Tomohisa ; Sawada, Shizuo ; Maeda, Satoshi ; Shinozaki, Satoshi
Author_Institution :
Toshiba Corporation, Kawasaki, Japan
Volume :
34
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
2255
Lastpage :
2259
Abstract :
Experimental and analytical studies on submicrometer LOCOS oxide structures have been carried out. LOCOS oxide thickness reduction in submicrometer nitride windows has been newly observed. However, the bird´s beak length remains constant, in spite of decreasing the nitride window to 0.3 µm. In order to explain these results, a simple oxidation model is experimentally introduced that considers the lateral diffusion of oxidants from the nitride edge. Oxide thickness reduction is due to the decrease of oxidants in the submicrometer nitride window. A locus for the isolation region length in the etched back LOCOS process is also given by using our model. The nitride window sensitivity for LOCOS oxide structures should be considered during the process design for miniature devices with a submicrometer feature size.
Keywords :
Circuits; Etching; Helium; Isolation technology; Large scale integration; Lithography; Oxidation; Process design; Semiconductor impurities; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23228
Filename :
1486939
Link To Document :
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