Title :
IIA-8 multiple HEMT with 1-W/mm power density at 21GHz
Author :
Saunier, Paul ; Lee, Jae W.
fDate :
11/1/1987 12:00:00 AM
Keywords :
Current density; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; Lattices; Quantum computing; Substrates; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23251
