IIIA-1 high-frequency GaInAs/InP multiple quantum well buried mesa electroabsorption optical modulator

Author

Miller, B.I. ; Koren, U. ; Tucker, Rodney ; Eisenstein, Gadi ; Bar-Joseph, I. ; Miller, David A. B. ; Chemla

Volume

Issue

fYear

1987

fDate

11/1/1987 12:00:00 AM

Firstpage

2362

Lastpage

2362

Keywords

Absorption; Bandwidth; Indium phosphide; Insertion loss; Iron; Optical modulation; PIN photodiodes; Quantum well devices; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1987.23262

Filename

1486973

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