Title :
IVB-7 yttrium oxide/silicon dioxide: A new dielectric structure for VLSI/ULSI
Author :
Manchanda, L. ; Gurvitch, Michael
fDate :
11/1/1987 12:00:00 AM
Keywords :
Capacitors; Circuits; Dielectrics; Insulation; Plasma immersion ion implantation; Plasma temperature; Silicon compounds; Ultra large scale integration; Very large scale integration; Yttrium;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23291
