DocumentCode
1119131
Title
Origin of the enhancement of negative differential resistance at low temperatures in double-barrier resonant tunneling structures
Author
Wu, J.S. ; Chang, Chun-Yen ; Lee, Chien-Ping ; Wang, Yeong-Her ; Kai, F.
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Hsin-Chu, Taiwan
Volume
10
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
301
Lastpage
303
Abstract
An explanation of the increased peak-to-valley current ratio for double-barrier resonant tunneling structures (DBRTSs) operated at low temperatures is proposed. It was found that this phenomenon is an inherent property of DBRTSs not caused by the suppression of thermionic current over barriers. The energy distributions of electrons at different temperatures result in variations of peak and valley currents.<>
Keywords
negative resistance; semiconductor diodes; semiconductor junctions; solid-state microwave devices; tunnelling; double-barrier; electron energy distribution; low temperatures; negative differential resistance; peak-to-valley current ratio; resonant tunneling structures; Electrons; Frequency; Laboratories; Microwave oscillators; Molecular beam epitaxial growth; Resonant tunneling devices; Scattering; Temperature dependence; Temperature distribution; Thermionic emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.29659
Filename
29659
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