Title :
On charge nonconservation in FET´s
Author :
Smith, I.W. ; Statz, H. ; Haus, H.A. ; Pucel, R.A.
Author_Institution :
Raytheon Company, Lexington, MA
fDate :
12/1/1987 12:00:00 AM
Abstract :
It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the model proposed in [2], is a genuine manifestation of the physics of FET´s and is not a sign of improper behavior in a circuit simulator. However, if necessary, one may construct a model having these charges as state variables by introducing a current generator that transfers charge from source to drain internally without producing extra currents in the leads of the device.
Keywords :
Capacitance; Circuit simulation; FETs; Gallium arsenide; Laboratories; Physics; Positron emission tomography; SPICE; Space charge; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23353