Title :
A controlled-avalanche superlattice transistor
Author :
Bhattacharya, Pallab K. ; Chin, Albert ; Seo, Kwang S.
Author_Institution :
University of Michigan, Ann Arbor, MI
fDate :
1/1/1987 12:00:00 AM
Abstract :
A novel bipolar avalanche transistor is proposed. Controlled avalanche and large current output over a significant bias region is achieved by incorporating a staircase multiplication region at the base-collector junction. The III-V materials choice, device design, and computed output characteristics are presented and discussed.
Keywords :
Conducting materials; Electrons; Impact ionization; Optical devices; Optical noise; Optical saturation; Optical scattering; Optical superlattices; Photonic band gap; Semiconductor superlattices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26536
