DocumentCode :
1119809
Title :
Electron energy distribution at the insulator-semiconductor interface in AC thin film electroluminescent display devices
Author :
Aguilera, Alberto ; Singh, Vijay P. ; Morton, David C.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., El Paso, TX, USA
Volume :
41
Issue :
8
fYear :
1994
fDate :
8/1/1994 12:00:00 AM
Firstpage :
1357
Lastpage :
1363
Abstract :
Electron emission from insulator-semiconductor interface in ZnS:Mn ac thin film electroluminescent (ACTFEL) display devices was investigated by studying the current and field waveforms. A new technique for measuring the interface electron energy distribution at insulator-semiconductor interfaces was developed. The technique involves the measurement of tunnel current transients and can be used to study the interface electron energy distribution between any insulator-semiconductor pair with which an ac thin film test structure can be fabricated. It was applied to a ZnS:Mn display device at two temperatures of 10 K and 300 K and to a metal interface device structure
Keywords :
II-VI semiconductors; electroluminescent displays; manganese; semiconductor-insulator boundaries; zinc compounds; 10 K; 300 K; AC thin film electroluminescent display devices; ZnS:Mn; current waveforms; electron emission; electron energy distribution; field waveforms; insulator-semiconductor interface; metal interface device; tunnel current transients; Current measurement; Electroluminescent devices; Electron emission; Energy measurement; Flat panel displays; Insulation; Insulator testing; Temperature; Thin film devices; Transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.297730
Filename :
297730
Link To Document :
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