• DocumentCode
    1120764
  • Title

    Theory of a tunable Raman laser

  • Author

    Wolff, P.A.

  • Author_Institution
    Bell Telephone Lab., Murray Hill, NJ, USA
  • Volume
    2
  • Issue
    9
  • fYear
    1966
  • fDate
    9/1/1966 12:00:00 AM
  • Firstpage
    659
  • Lastpage
    665
  • Abstract
    Mobile electrons in semiconductors, when subjected to a magnetic field, Raman scatter at a frequency which is shifted from that of the incident light by twice the electron cyclotron frequency. This process may provide the mechanism for a tunable Raman laser. A formula is derived for the threshold pump power required to stimulate such Raman emission. N -type InSb pumped by a 10.6-μ CO2laser appears to be a good combination for achieving laser action. Pump powers of 1 to 10 MW/cm2are required for operation in the wavelength range of 12 to 25 μ. Such power densities have been achieved with pulsed CO2lasers. Stimulated Raman emission at wavelengths beyond 60 μ is also a possibility. The threshold pump power in the range is comparable to that in the near infrared. However, magnetic fields greater than 100 kGs are required to shift the Raman frequency into the far infrared.
  • Keywords
    Electron mobility; Frequency; Laser excitation; Laser theory; Magnetic fields; Power lasers; Pump lasers; Raman scattering; Semiconductor lasers; Tunable circuits and devices;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1966.1074086
  • Filename
    1074086