DocumentCode
1120764
Title
Theory of a tunable Raman laser
Author
Wolff, P.A.
Author_Institution
Bell Telephone Lab., Murray Hill, NJ, USA
Volume
2
Issue
9
fYear
1966
fDate
9/1/1966 12:00:00 AM
Firstpage
659
Lastpage
665
Abstract
Mobile electrons in semiconductors, when subjected to a magnetic field, Raman scatter at a frequency which is shifted from that of the incident light by twice the electron cyclotron frequency. This process may provide the mechanism for a tunable Raman laser. A formula is derived for the threshold pump power required to stimulate such Raman emission.
-type InSb pumped by a 10.6-μ CO2 laser appears to be a good combination for achieving laser action. Pump powers of 1 to 10 MW/cm2are required for operation in the wavelength range of 12 to 25 μ. Such power densities have been achieved with pulsed CO2 lasers. Stimulated Raman emission at wavelengths beyond 60 μ is also a possibility. The threshold pump power in the range is comparable to that in the near infrared. However, magnetic fields greater than 100 kGs are required to shift the Raman frequency into the far infrared.
-type InSb pumped by a 10.6-μ COKeywords
Electron mobility; Frequency; Laser excitation; Laser theory; Magnetic fields; Power lasers; Pump lasers; Raman scattering; Semiconductor lasers; Tunable circuits and devices;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1966.1074086
Filename
1074086
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