Growth of ${\rm BaSnO}_{3}$ Doped ${\rm ErBa}_{2}{\rm Cu}_{3}{\rm O}_{7-\delta }$ Thin Fil

We compared J _C properties of i) Pure ErBa₂Cu₃O_7-delta films on BaZrO₃ buffered MgO substrates, ii) Pure ErBa₂Cu₃O_7-delta films on SrTiO₃ substrates, iii) BaSnO₃ doped ErBa₂Cu₃O_7-delta films on SrTiO₃ substrates, and iv) BaSnO₃ doped ErBa₂Cu₃O_7-delta films on BaSnO₃ buffered MgO substrates. The lowest J _C was obtained from pure ErBa₂Cu₃O_7-delta films on SrTiO₃ substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa₂Cu₃O_7-delta films on BaSnO₃ buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest J _C was obtained from BaSnO₃ doped ErBa₂Cu₃O_7-delta films on SrTiO₃ substrates. Almost the same J _C was obtained from BaSnO₃ doped ErBa₂Cu₃O_7-delta films on BaSnO₃ buffered MgO substrates. 2 wt% BaSnO₃ doping into ErBa₂Cu₃O_7-delta films on BaSnO₃ buffered MgO substrates are very effective to enhance J _{C S} of the films at a high magnetic field.