Title :
High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
Author :
Geis, M.W. ; Rathman, D.D. ; Ehrlich, D.J. ; Murphy, R.A. ; Lindley, W.T.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
fDate :
8/1/1987 12:00:00 AM
Abstract :
Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.
Keywords :
Boron; Nitrogen; Ohmic contacts; Photonic band gap; Probes; Schottky diodes; Semiconductor diodes; Temperature; Thermal conductivity; Tungsten;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26653
