DocumentCode :
1121086
Title :
High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
Author :
Geis, M.W. ; Rathman, D.D. ; Ehrlich, D.J. ; Murphy, R.A. ; Lindley, W.T.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA
Volume :
8
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
341
Lastpage :
343
Abstract :
Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have power gain. Further, the transistors exhibited power gain at 510°C and the Schottky diodes were operational at 700°C.
Keywords :
Boron; Nitrogen; Ohmic contacts; Photonic band gap; Probes; Schottky diodes; Semiconductor diodes; Temperature; Thermal conductivity; Tungsten;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26653
Filename :
1487203
Link To Document :
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