Title :
Optimum emitter aspect ratio for bipolar fiber-optic preamplifiers
Author :
Solheim, Alan G. ; Roulston, David J.
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
fDate :
9/1/1987 12:00:00 AM
Abstract :
Many monolithic fiber-optic preamplifiers use a bipolar transistor as the front-end device due to process restraints, despite the relatively poor noise performance of the bipolar transistor. This paper shows that there is an optimum emitter aspect ratio in a bipolar transistor operated at the optimum collector current for noise performance. An expression for this optimum emitter aspect ratio is developed and shown to agree very well with simulation results.
Keywords :
Bipolar transistors; Computational geometry; Computational modeling; Computer simulation; Doping profiles; Optical noise; Preamplifiers; Semiconductor device noise; Signal to noise ratio; Solid modeling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26685
