DocumentCode :
1121587
Title :
Barrier technology for DyBa2Cu3O7-x junctions and related structures
Author :
Beauchamp, K.M. ; Zhang, Y.-J. ; Johnson, B.R. ; Schultz, R.K. ; Spalding, G.C. ; Tsen, M. ; Wang, T. ; Evans, J.F. ; Mecartney, M.L. ; Goldman, A.M.
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
Volume :
27
Issue :
2
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
3090
Lastpage :
3093
Abstract :
Layered structures which include the high-temperature superconductor DyBa2Cu3O7-x have been fabricated using molecular beam epitaxy with ozone as the activated oxygen source. A c-axis-oriented DyBa2Cu3O7-x thin film with a Tc of 74 K has been grown on a layer of the rare earth sesquioxide Dy2O3 on a (100) oriented SrTiO3 substance. Dy2O3 has also been incorporated as a barrier between two layers of DyBa2 Cu3O7-x, where the Tc of the top layer is 89 K. X-ray diffraction reveals oriented growth of both the DyBa2Cu3O7-x and the Dy2O3 layers. Cross-sectional transmission electron microscopy shows the detailed matching of the layers, demonstrating that the interfaces are abrupt, with {100} Dy2O 3 planes parallel to {001} DyBa2Cu3O 7-x planes. These results are an indication that high-quality, all-high-Tc superconductor tunneling junctions can be fabricated in this system
Keywords :
X-ray diffraction examination of materials; barium compounds; dysprosium compounds; high-temperature superconductors; molecular beam epitaxial growth; superconducting junction devices; transmission electron microscope examination of materials; 74 K; 89 K; Dy2O3 barrier layer; DyBa2Cu3O7-x junctions; DyBa2Cu3O7-x-Dy2O 3-DyBa2Cu3O7-x; DyBa2Cu3O7-x-Dy2O 3-SrTiO3; SrTiO3; X-ray diffraction; high temperature superconductors; molecular beam epitaxy; Dielectric constant; Electrodes; Fabrication; High temperature superconductors; Insulation; Josephson junctions; Molecular beam epitaxial growth; Superconducting epitaxial layers; Superconducting materials; Superconductivity;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.133865
Filename :
133865
Link To Document :
بازگشت