DocumentCode
1123440
Title
High-power 1.3-µm InGaAsP P-substrate buried crescent lasers
Author
Sakakibara, Y. ; Higuchi, H. ; Oomura, E. ; Nakajima, Y. ; Yamamoto, Y. ; Goto, K. ; Namizaki, H. ; Ikeda, K. ; Susaki, W.
Author_Institution
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
Volume
3
Issue
5
fYear
1985
fDate
10/1/1985 12:00:00 AM
Firstpage
978
Lastpage
984
Abstract
High performance of newly developed InGaAsP P-substrate buried crescent (PBC) laser diodes is described. It is shown that the PBC laser has superior characteristics to the conventional buried crescent (BC) laser with n-InP substrate. The maximum output power of 140 mW under a CW condition is realized at room temperature. CW light output power of 10 mW up to 110°C is achieved. A maximum CW temperature of 135°C is obtained. Stable CW operations have been confirmed in 70°C 5-mW and 70°C 20-mW aging tests. The reason for the high performance is discussed in relation to the leakage current which flows through the current blocking layers.
Keywords
Optical fiber transmitters, lasers; Diode lasers; Etching; Fiber lasers; Indium phosphide; Laser modes; Leakage current; Optical device fabrication; Power generation; Temperature; Zinc;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1985.1074329
Filename
1074329
Link To Document