Title :
Improved Flux Pinning in Nanostructured REBCO Films Controlling the APC Growth Mechanism
Author :
Yoshida, Yutaka ; Ichino, Yusuke ; Ozaki, Toshinori ; Funaki, Shuhei ; Takai, Yoshiaki ; Matsumoto, Kaname ; Ichinose, Ataru ; Horii, Shigeru ; Mukaida, Masashi ; Kita, R.
Author_Institution :
Dept. of Energy Eng. & Sci., Nagoya Univ., Nagoya, Japan
fDate :
6/1/2009 12:00:00 AM
Abstract :
Recently increasing the J c at higher magnetic field can be accomplished by introducing artificial pinning center (APC) into REBCO coated conductor and films. In particular, in impurity additions, nano-BaZrO3 (BZO) rods in PLD-YBCO and GdBCO coated conductor have been investigated for c-axis correlated flux pinning. We have reported the high J c SmBCO and (Nd,Eu,Gd)BCO films and coated conductor using usual PLD, low temperature growth (LTG) and Vapor-liquid-solid growth (VLS) technique. In this research we studied the controlling the nanorods BZO growth mechanism by initial deposition of nanodots on the surface for improving the J c at magnetic field. REBCO+BZO film are found to have superior performance in magnetic field at all field orientations, suggesting the presence of BZO-rods with optimized shape and density caused increasing BZO-dots at nuclear growth. The present work has confirmed that the control of APC initial growth is a promising technique to produce flux pinning center.
Keywords :
critical current density (superconductivity); europium compounds; flux pinning; gadolinium compounds; high-temperature superconductors; magnetic field effects; nanostructured materials; nanotechnology; neodymium compounds; samarium compounds; superconducting thin films; APC growth mechanism; BaZrO3; EuBa2Cu3Oy; GdBa2Cu3Oy; NdBa2Cu3Oy; SmBa2Cu3Oy; YBa2Cu3Oy; artificial pinning center; flux pinning; impurity additions; magnetic field; nanostructured films; vapor-liquid-solid growth; Magnetic field measurement; superconducting film; superconducting wires; thin films;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2009.2018737