DocumentCode
112398
Title
Error-Correcting Code Aware Memory Subsystem
Author
Wooyoung Jang
Author_Institution
Dept. of Electrics & Electr. Eng., Dankook Univ., Yongin, South Korea
Volume
33
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
1706
Lastpage
1717
Abstract
An error-correcting code (ECC) immune to bit errors has been widely used in reliable computer systems. However, ECC techniques can make memory performance severely degraded since incomplete-word write requests lead to inefficient read-to-write (RTW) and write-to-read operations of synchronous dynamic random access memory. In this paper, we propose a memory subsystem efficient for ECC operations. Our key idea is that the RTW operations causing incomplete-word write requests are split and grouped into independent read and write operations, and then the grouped read and write operations are individually scheduled for the optimal memory performance under application constraints. Experimental results show that the proposed ECC-aware memory subsystem achieves 17% shorter memory latency, and 12% higher memory utilization, on average, than the latest conventional memory subsystems on industrial multimedia applications. Moreover, the ECC-aware memory subsystem improves up to 2.5 times higher memory performance on synthetic benchmarks.
Keywords
DRAM chips; error correction codes; error statistics; ECC-aware memory subsystem; bit errors; error-correcting code; industrial multimedia applications; read-to-write operation; synchronous dynamic random access memory; write-to-read operation; Buffer storage; Clocks; Computers; Error correction codes; Memory management; Reliability; SDRAM; Error-correcting code (ECC); memory subsystem; multimedia system; synchronous dynamic random access memory (SDRAM);
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2014.2351494
Filename
6926923
Link To Document