Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)

Author

Kyoung Min Choi ; Woo Young Choi

Author_Institution

Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

942

Lastpage

944

Abstract

The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (V_th). TFETs show ~ 1.4× larger V_th standard deviation (σV_th) and ~ 4.6× larger S standard deviation (σS) than MOSFETs at high drain voltage (VD). It is because TFET characteristics are mainly determined by WF values of metal grains near to the source region where band-to-band tunneling occurs.

Keywords

field effect transistors; tunnel transistors; 3D device simulation; MOSFET; TFET characteristics; WF value; WFV effect; band-to-band tunneling; drain voltage; metal grains; metal-oxide-semiconductor FET; subthreshold swing; tunneling field-effect transistors; work-function variation effect; Subthreshold swing $(S)$; threshold voltage $(V_{rm th})$; tunneling field-effect transistors (TFETs); turn-on voltage $(V_{rm turnhbox{--}on})$; work-function variation (WFV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2264824

Filename

6544239