DocumentCode :
1124244
Title :
Enhancement-mode In0.52Al0.48As/In0.53Ga0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate
Author :
Kim, S. ; Adesida, I. ; Jang, J.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Volume :
41
Issue :
15
fYear :
2005
fDate :
7/21/2005 12:00:00 AM
Firstpage :
871
Lastpage :
872
Abstract :
InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium arsenide; gold; high electron mobility transistors; indium compounds; iridium; platinum; titanium; 0.25 micron; 134 mV; 250 C; In0.52Al0.48As-In0.53Ga0.47As-InP; Ir-Ti-Pt-Au; enhancement-mode operation; high electron mobility transistors; metal diffusivity; thermal stability;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20051504
Filename :
1487758
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1124244
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