DocumentCode

1124263

Title

Laser diodes made from dislocation-free GaAs showing a homogeneous near-field pattern

Author

Hatz, J.

Author_Institution

Univ. of Berne, Berne, Switzerland

Volume

3

Issue

11

fYear

1967

fDate

11/1/1967 12:00:00 AM

Firstpage

643

Lastpage

644

Keywords

Atom lasers; Atomic beams; Atomic measurements; Diode lasers; Gallium arsenide; Mirrors; Near-field radiation pattern; Optical materials; P-n junctions; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1967.1074414

Filename

1074414