Charge trapping and polarity dependence of interface state generation in nitrided oxide gate dielectric by electron photoinjection

Author

Yuan, X.-J. ; Marsland, J.S. ; Eccleston, W. ; Bouvet, D. ; Mi, Junping ; Dutoit, M.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ.

Volume

30

Issue

14

fYear

1994

fDate

7/7/1994 12:00:00 AM

Firstpage

1180

Lastpage

1181

Abstract

The polarity dependence of interface state (D_u) generation in NH₃-nitrided oxide MOS capacitors has been studied by the internal photoemission (IPE) electron injection technique. A greater D_u(mg) generation rate has be found for IPE electron injection from the Si substrate than from the Al gate at low injection fluence <10¹⁶ electron/cm². The positive charge generation has also been observed during IPE electron injection from Si substrate. The high frequency C-V and photo-IV measurements indicate that the location of generated positive charge is near the Si/nitrided oxide interface

Keywords

capacitors; hole traps; interface electron states; metal-insulator-semiconductor devices; nitridation; photoemission; semiconductor device testing; Al gate; IPE electron injection; MOS capacitors; NH₃; NH₃-nitrided oxide MOS capacitors; Si; Si substrate; Si-SiON; Si/nitrided oxide interface; charge trapping; electron photoinjection; generation rate; high frequency C-V measurements; interface state generation; internal photoemission electron injection technique; low injection fluence; nitrided oxide gate dielectric; photo-IV measurements; polarity dependence; positive charge generation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940748

Filename

299379