• DocumentCode
    1124976
  • Title

    Laser annealed W/Sn contacts on N-type GaAs

  • Author

    Machac, Pavel ; Myslik, V. ; Vrnata, M.

  • Author_Institution
    Dept. of Solid-State Eng., Inst. of Chem. Technol., Prague
  • Volume
    30
  • Issue
    14
  • fYear
    1994
  • fDate
    7/7/1994 12:00:00 AM
  • Firstpage
    1185
  • Lastpage
    1187
  • Abstract
    The authors deal with the preparation of W/Sn/GaAs and W/Sn/Pd/GaAs contact structures. The metal layers were deposited by the sputtering method and annealing was carried out using an Nd:YAG pulsed laser. Better quality was achieved using contact structures containing palladium. The best measured contact resistance were ~2.1×10-6 Ω cm2
  • Keywords
    III-V semiconductors; contact resistance; gallium arsenide; laser beam annealing; ohmic contacts; palladium; semiconductor-metal boundaries; sputter deposition; sputtered coatings; tin; tungsten; Nd:YAG pulsed laser; W-Sn-GaAs; W-Sn-Pd-GaAs; YAG:Nd; YAl5O12:Nd; contact resistance; laser annealed W/Sn contacts; metal layers; n-type GaAs; preparation; sputtering method;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940804
  • Filename
    299382
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124976