DocumentCode
1125048
Title
Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies
Author
Ribes, Guillaume ; Bruyere, S. ; Roy, D. ; Parthasarthy, C. ; Muller, M. ; Denais, M. ; Huard, V. ; Skotnicki, T. ; Ghibaudo, G.
Author_Institution
Central R&D Labs., Crolles
Volume
6
Issue
2
fYear
2006
fDate
6/1/2006 12:00:00 AM
Firstpage
132
Lastpage
135
Abstract
In this paper, an analysis of the trapping in high- dielectrics and its origin is given. It is found that the defect is consistent with oxygen vacancies in monoclinic hafnia. Finally, guidelines are proposed to reduce these instabilities
Keywords
Jahn-Teller effect; electron traps; hafnium compounds; high-k dielectric thin films; tunnelling; vacancies (crystal); Jahn-Teller effect; high-k dielectrics; monoclinic hafnia; oxygen vacancies; positive bias temperature instability; trapping process; Dielectric materials; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Laboratories; Oxygen; Pulse measurements; Research and development; Temperature; HfSiON; high-; positive bias temperature instability (PBTI);
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2006.877867
Filename
1673700
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