Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)

Author

Southwick, Richard G. ; Knowlton, William B.

Author_Institution

Dept. of Electr. & Comput. Eng., Boise State Univ., ID

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

136

Lastpage

145

Abstract

Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO₂) interfacial layer requires an even greater understanding of the energy band behavior. A program that quickly determines the band diagrams based on a simple analytical model was created. It is used to explore the behavior of various oxide stacks with the ability to easily vary important parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness. The usefulness of this program to predict potential reliability issues is also demonstrated

Keywords

MIS devices; band structure; semiconductor device models; semiconductor device reliability; silicon compounds; MOS devices; SiO₂; device reliability; energy band diagrams; high-k gate stacks; interfacial layer; silicon dioxide; visual representation program; Analytical models; Dielectric constant; Dielectric materials; Electric potential; Electrons; Hafnium oxide; MOS devices; Photonic band gap; Tunneling; Voltage; Dual oxide; MOS; energy band; high-; reliability;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.876971

Filename

1673701