A new degradation mode for heterojunction bipolar transistors under reverse-bias stress

Author

Ruat, Marie ; Angers, Raymond ; Pakfar, Ardechir ; Ghibaudo, Gerard ; Chantre, Alain ; Revil, Nathalie ; Pananakakis, Georges

Author_Institution

STMicroelectronics, Crolles

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

154

Lastpage

162

Abstract

A new degradation behavior for heterojunction bipolar transistors under reverse base-emitter junction stress is presented and discussed. Hot carrier injection triggered a correlated decrease of both the base and collector-currents in the first stress-time steps. Both experiments and simulations show that this degradation is linked to the stress-induced suppression of initially present excess ideal components for both currents

Keywords

heterojunction bipolar transistors; hot carriers; semiconductor device breakdown; degradation behavior; heterojunction bipolar transistors; hot carrier injection; reverse base-emitter junction stress; Bipolar transistors; Computational modeling; Degradation; Design automation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Silicon germanium; Space technology; Stress; Heterojunction bipolar transistors (HBTs); hot carriers (HC); reliability stresses; technology computer-aided design (TCAD) simulations;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.876592

Filename

1673703