DocumentCode :
1125077
Title :
A new degradation mode for heterojunction bipolar transistors under reverse-bias stress
Author :
Ruat, Marie ; Angers, Raymond ; Pakfar, Ardechir ; Ghibaudo, Gerard ; Chantre, Alain ; Revil, Nathalie ; Pananakakis, Georges
Author_Institution :
STMicroelectronics, Crolles
Volume :
6
Issue :
2
fYear :
2006
fDate :
6/1/2006 12:00:00 AM
Firstpage :
154
Lastpage :
162
Abstract :
A new degradation behavior for heterojunction bipolar transistors under reverse base-emitter junction stress is presented and discussed. Hot carrier injection triggered a correlated decrease of both the base and collector-currents in the first stress-time steps. Both experiments and simulations show that this degradation is linked to the stress-induced suppression of initially present excess ideal components for both currents
Keywords :
heterojunction bipolar transistors; hot carriers; semiconductor device breakdown; degradation behavior; heterojunction bipolar transistors; hot carrier injection; reverse base-emitter junction stress; Bipolar transistors; Computational modeling; Degradation; Design automation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Silicon germanium; Space technology; Stress; Heterojunction bipolar transistors (HBTs); hot carriers (HC); reliability stresses; technology computer-aided design (TCAD) simulations;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2006.876592
Filename :
1673703
Link To Document :
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