Title :
Safe operating area of GaAs MESFET for nonlinear applications
Author :
Malbert, Nathalie ; Labat, Nathalie ; Ismail, Naoufel ; Touboul, Andre ; Muraro, Jean-Luc ; Brasseau, Francis ; Langrez, Dominique
Author_Institution :
IXL Lab., Talence
fDate :
6/1/2006 12:00:00 AM
Abstract :
This paper provides a new approach to evaluate the transistor safe operating area for a nonlinear operation in the overdrive operating conditions. This approach has been implemented for a MESFET technology. The methodology consists in performing ON-state and OFF-state accelerated DC step stresses for bias conditions, which can be reached by VDS and VGS sweeps in the overdrive operating conditions. Hence, the results of an RF ageing test performed in nonlinear conditions have confirmed the methodology used in this paper
Keywords :
III-V semiconductors; Schottky gate field effect transistors; failure analysis; gallium arsenide; semiconductor device breakdown; semiconductor device reliability; DC step stress; GaAs; MESFET; RF ageing test; breakdown voltage; nonlinear operation; overdrive operating conditions; semiconductor device reliability; transistor safe operating area; Electric breakdown; Gallium arsenide; Life testing; MESFETs; Military standards; Performance evaluation; Radio frequency; Semiconductor optical amplifiers; Stress; Voltage; Breakdown voltage; MESFET; reliability;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.877866
