Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution

Author

Niraula, M. ; Yasuda, K. ; Takai, N. ; Matsumoto, M. ; Suzuki, Y. ; Tsukamoto, Y. ; Ito, Y. ; Sugimoto, S. ; Kouno, S. ; Yamazaki, D. ; Agata, Y.

Author_Institution

Grad. Sch. of Eng., Nagoya Inst. of Technol., Nagoya, Japan

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

856

Lastpage

858

Abstract

Chemical etching of CdTe crystals using hydrogen bromide (HBr)-based etchant was studied and its effectiveness in detector leakage current, gamma radiation detection performance was compared with that of a conventional Br-methanol (BM) etched detector. It was found that effect of surface leakage in total detector leakage current was lower in the HBr-processed detectors, and they also exhibited better radiation detection performances than that of the conventional BM-etched detectors. A slight variation in surface chemical states was found in these differently processed crystals which could be related to the observed differences in detector properties.

Keywords

II-VI semiconductors; cadmium compounds; etching; gamma-ray detection; leakage currents; semiconductor counters; surface states; wide band gap semiconductors; CdTe; CdTe detectors; chemical etching; gamma radiation detection performance; hydrogen bromide-based etching solution; surface chemical states; surface leakage effect; surface processing; total detector leakage current; Cadmium compounds; Crystals; Detectors; II-VI semiconductor materials; Leakage currents; Radiation detectors; Surface treatment; CdTe; Nuclear radiation detector; Surface etching; nuclear radiation detector; spectroscopy; surface etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2450835

Filename

7138572