A computer model for the simulation of thin-film silicon-hydrogen alloy solar cells

Author

Gray, Jeffery L.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

36

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

906

Lastpage

912

Abstract

A 1-D computer simulation code, Thin-Film Semiconductor Simulation Program (TFSSP), for the modeling of TF Si:H solar cells is discussed. The code incorporates a variety of physical models, such as a position-dependent bandgap, electron affinity, dielectric constant, density of states, mobility, exponential band tails, and dangling-bond defect states. This flexibility allows different model assumptions to be analyzed and compared. TFSSP and the physical models used are described. An example simulation of a typical TF Si:H solar cell is presented

Keywords

amorphous semiconductors; electronic engineering computing; elemental semiconductors; hydrogen; semiconductor device models; semiconductor thin films; silicon; solar cells; 1D computer simulation code; Thin-Film Semiconductor Simulation Program; amorphous Si:H thin film solar cells; band tails; computer model; dangling-bond defect states; density of states; dielectric constant; electron affinity; mobility; physical models; position-dependent bandgap; Bonding; Computational modeling; Computer simulation; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor process modeling; Semiconductor thin films; Silicon alloys; Tail;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.299672

Filename

299672