DocumentCode
1126560
Title
Electrical crosstalk in p-i-n arrays - Part I: Theory
Author
Kaplan, D.R. ; Forrest, S.R.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume
4
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1460
Lastpage
1469
Abstract
The electrical crosstalk between elements in a monolithic array of long wavelength p-i-n photodiodes is analyzed theoretically. It is shown that the parisitic capacitances in the external package are the dominant effects contributing to crosstalk, whereas resistive coupling leads to a negligible crosstalk. A general theory is derived to determine the effects of the capacitive coupling between channels on digital optical receiver sensitivity. The case of a raised cosine output waveform and an FET transimpedance amplifier is then considered to illustrate the tradeoff between crosstalk and receiver sensitivity. It is shown that the tradeoff may be optimized by varying the feedback resistance in a transimpedance amplifier.
Keywords
Arrays; Crosstalk; Optical receivers; p-i-n photodiodes; Capacitance; Capacitors; Crosstalk; Detectors; Optical amplifiers; Optical receivers; P-i-n diodes; PIN photodiodes; Packaging; Resistors;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.1986.1074653
Filename
1074653
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