• DocumentCode
    1126560
  • Title

    Electrical crosstalk in p-i-n arrays - Part I: Theory

  • Author

    Kaplan, D.R. ; Forrest, S.R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    4
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1460
  • Lastpage
    1469
  • Abstract
    The electrical crosstalk between elements in a monolithic array of long wavelength p-i-n photodiodes is analyzed theoretically. It is shown that the parisitic capacitances in the external package are the dominant effects contributing to crosstalk, whereas resistive coupling leads to a negligible crosstalk. A general theory is derived to determine the effects of the capacitive coupling between channels on digital optical receiver sensitivity. The case of a raised cosine output waveform and an FET transimpedance amplifier is then considered to illustrate the tradeoff between crosstalk and receiver sensitivity. It is shown that the tradeoff may be optimized by varying the feedback resistance in a transimpedance amplifier.
  • Keywords
    Arrays; Crosstalk; Optical receivers; p-i-n photodiodes; Capacitance; Capacitors; Crosstalk; Detectors; Optical amplifiers; Optical receivers; P-i-n diodes; PIN photodiodes; Packaging; Resistors;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1986.1074653
  • Filename
    1074653