DocumentCode
1126610
Title
A simple analytical model for hot-carrier MOSFETs
Author
El-Banna, Mohamed ; El-Nokali, Mahmoud A.
Volume
36
Issue
5
fYear
1989
fDate
5/1/1989 12:00:00 AM
Firstpage
979
Lastpage
986
Abstract
Several second-order effects such as mobility degradation, carrier velocity saturation, and channel-length modulation are included in the model. The source-drain series resistances are accounted for, and a simple formula to calculate the output conductance without creating a discontinuity at the transition from the linear to the saturation region is proposed. The accuracy of the model is confirmed by comparing its theoretical predictions with the experimental data available in the literature. The model is used to estimate the lateral electric field at the drain to which hot-carrier effects are sensitive
Keywords
carrier mobility; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFET; analytical model; carrier velocity saturation; channel-length modulation; hot-carrier effects; lateral electric field; mobility degradation; output conductance; saturation region; second-order effects; source-drain series resistances; Analytical models; Circuits; Degradation; Electrons; Hot carrier effects; Hot carriers; MOSFETs; Power supplies; Predictive models; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.299681
Filename
299681
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