Transient characteristics of n-channel hybrid Schottky injection FETs

Author

Sin, Johnny K O ; Salama, C. Andre T ; Hou, Li-zhang

Volume

36

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

993

Lastpage

1000

Abstract

Theoretical transient characteristics of hybrid Schottky injection FETs (HSINFETs) are considered. The theoretical analysis is based on two-dimensional numerical simulations, in which the entire turn-off process and the effects of minority-carrier injection levels on the transient performance of the HSINFET device are analyzed. The analysis shows that the fast turn-off speed in the HSINFET device occurs because (1) only a small number of minority carriers is injected into the drift region, (2) a current path, provided by the Schottky contact, effectively removes electrons from the drift region during turn-off, and (3) Schottky clamping at the anode is effective during turn-off and prevents the p⁺ portion of the hybrid anode from significantly injecting holes. Experimental results compared the DC and transient performance of the lateral double-diffused MOS transistor (LDMOST), lateral insulated-gate transistor (LIGT), Schottky injection field-effect (SINFET), and HSINFET are presented

Keywords

insulated gate field effect transistors; minority carriers; power transistors; semiconductor device models; transients; Schottky clamping; current path; drift region; hybrid Schottky injection FETs; minority-carrier injection levels; n-channel hybrid FET; transient characteristics; turn-off process; two-dimensional numerical simulations; Anodes; Charge carrier processes; Clamps; FETs; Insulation; MOSFETs; Numerical simulation; Performance analysis; Schottky barriers; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.299683

Filename

299683