• DocumentCode
    1126899
  • Title

    Formation and disappearance of defect centers in GeO2-doped silica fibers with heat treatments

  • Author

    Nakahara, Motohiro ; Ohmori, Yasuji ; Itoh, Hiroki ; Shimizu, Makoto ; Inagaki, Nobuo

  • Author_Institution
    NTT Public Corp., Musashino-shi, Tokyo, Japan
  • Volume
    4
  • Issue
    2
  • fYear
    1986
  • fDate
    2/1/1986 12:00:00 AM
  • Firstpage
    127
  • Lastpage
    132
  • Abstract
    Electronic state changes of defect centers in Ge-doped SiO2fibers were investigated using ESR technique. The germanium associated defects, especially Ge(3) centers, are mainly produced during the drawing process and are quenched in the fibers. The heat treatment of the Ge-doped fiber causes a remarkable decrease in the Ge(3) ESR intensity, subsequently causing OH absorption loss increase. The mechanism of this OH loss increase is proposed, in relation to the interactions between the Ge(3) centers and hydrogen.
  • Keywords
    Dielectric materials/devices, thermal factors; Optical fiber losses; Optical fiber materials/fabrication; Bonding; Chemicals; Germanium; Glass; Heat treatment; Hydrogen; Optical fiber losses; Paramagnetic resonance; Silicon compounds; Temperature;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.1986.1074693
  • Filename
    1074693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1126899